Growth Materials™ 는 국방, 바이오, 통신, 소비재 용품에 이르는 다양한 분야에 적용되는 에피 서비스, 파운더리 공정을 지원합니다.
에피 시장에서의 폭 넓은 경험을 통해 Growth Materials™ 는 양산 수준의 기업뿐 아니라 소규모 프로젝트 개발에 종사하는 연구원들과도 협력하고 있습니다.
Growth Materials™ 는 미래 분야를 준비하는 에피웨이퍼 공정에 이바지하고 있습니다.
Compound semiconductor epitaxial wafers are used in a variety of applications including Wireless Optoelectronics, Office Products, Lighting, CPV, Advanced Lasers, High Power Devices, Communications, UV devices.
Growth Materials™ specializes in wafer epitaxial service, foundry services for the defense, biomedical, telecommunications and consumer products markets.
With our extensive experience in epitaxial market, Growth Materials™ works with clients to offer development quantities of wafers for the wide range of application projects as well as supports large scale volume.
Growth Materials™ wants to be the provider of advanced III-V epitaxial wafers that are tailored for optimal performance in futuristic applications.
Features
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고객 구조의 에피 서비스
-소규모 개발 과제부터 (1-3 wafers) 양산 수준의 대응
-세계적인 전문가들과의 협력
-고객 정보 보호
-빠른 납기
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General Application
-HBT, PHEMT, PIN DIODE, FET
-QW Emitting Lasers
-Schottky Diodes
-Near-IR, Lasers, VCSEL, VECSEL, 700 nm – 2200 nm
-LEDs
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Specific Application
-High Power Laser Diode
-980nm VcSel and Photodetector , VcSEL (600nm to 1550nm)
-DBR designs Epitaxial wafers
-APD
-THz lasers
-Graphene
-Silicon carbide diodes: Homoepitaxial layers and Heteroepitaxial layers
-Multi Junction Photovoltaic epitaxial wafers
-Nitride Epitaxial ( InGaN, InAlN, AlGaN, Near IR, UV, Blue) on Si, Sapphire, SiC, GaN
-GaSb laser diodes
- Customer-Specific Epitaxial service
-From Support fro development projects for small volume wafers (1-3 wafers) to Large scale production
-Protection of Customers intellectual property
-Prompt Delivery
- General Application
-HBT, PHEMT, PIN DIODE, FET
-QW Emitting Lasers
-Schottky Diodes
-Near-IR, Lasers, VCSEL, VECSEL, 700 nm – 2200 nm
-LEDs
- Specific Application
-High Power Laser Diode
-980nm VcSel and Photodetector , VcSEL (600nm to 1550nm)
-DBR designs Epitaxial wafers
-APD
Features
Custom Designed Epitaxial Service
- VCSELs, RC-LED, DBR, PIN PD, LDs, Solar Cell, HBTs, HEMTs
- Responsive Wavelength Band : 600~1060nm
- Epi Layer:
- GaAs..AlGaAs..AlAs
- GaAs..InGaAs..InAs
- InGaP..AlInGaP..AlInP
- GaAs..GaAsP
- InP..InGaAs..GaAs
- Size: 2inch ~ 6inch
Referential Products
Standard Epi wafer products LD / RC-LED
| FP-Dip wavelength | QWs material | DBR material | Wafer size | Thickness (um) | Substrate |
| 660~690 nm | AlGaInP/GaInP | AlGaAs/AlGaAs | 3~6 inch | 350 ~ 700 | GaAs |
| 770~790 nm | AlGaAs/AlGaAs | AlGaAs/AlGaAs | 3~6 inch | 350 ~ 700 | GaAs |
| 840~860 nm | AlGaAs/GaAs | AlGaAs/AlGaAs | 3~6 inch | 350 ~ 700 | GaAs |
| 970~990 nm | GaAs/InGaAs | AlGaAs/AlGaAs | 3~6 inch | 350 ~ 700 | GaAs |
VcSEL
- Uniform Wavelength band (FP-DIP) 650 ~1060nm
- FP-Dip Wavelength Uniformity: < 1%
- Tolerance <+/-2%
- Doping level tolerance: < 30%
- Doping Level Uniformity: <10%
- GaAs, AlGaAs, InGaAs, GaAsP, InGaAsP, AlInGaAsP, GaInP, AlGaInP
LD / RC-LED
- Guaranteed epitaxial wafer by national party
- Thickness Tolerance: +/- 5%,
- Thickness Uniformity:<3%
- Doping Level Tolerance:<30%
- Doping Level uniformity: <10%
- Mold Fraction Tolerance +/- 3%
- Uniformity: < 0.03
- Al Free InGaP/GaAsP QW 808 nm LD
- DBR applied RC-LED: 660~950nm
MOCVD
- Highly Reliable VcSel
- Variable Source from Low level laser to High Power Laser
- World best uniform FP-DIP
- Standard VcSEL 650~1060nm also available for customized wavelength
- QWs Structure Choice : GaAs, AlGaAs, InGaAs, GaAsP, InGaAsP, AlInGaAsP, GaInP, AlGaInP
- Consulting for your epi structures
- Growth for your designed structures
- Chip processing consulting.
Characterization Service
- XRD, ECV / Hall, PL and Mapping, SEM (TEM, AFM), etc
